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鈴木　寿一（スズキ　トシカズ）教授研究者総覧

No．書籍情報
1 Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs / Sato, Taku, Uryu, Kazuya, Okayasu, Junichi, Kimishima, Masayuki, Suzuki, Toshi-kazu, Applied Physics Letters, 113(6), pp.063505-1-063505-4, 2018-08-10, American Institute of Physics
2 狭ギャップ半導体における低次元鏡像電荷効果に基づく中赤外領域励起子制御 / 鈴木, 寿一, 科学研究費助成事業研究成果報告書, pp.1-5, 2018-06-22
3 Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al_2O_3 or AlTiO gate dielectrics / Le, Son Phuong, Nguyen, Duong Dai, Suzuki,Toshi-kazu, Journal of Applied Physics, 123(3), pp.034504-1-034504-7, 2018-01-19, American Institute of Physics
4 An InAs/high-k/low-k structure: Electron transport and interface analysis / Ui, Toshimasa, Mori, Ryousuke, Le, Son Phuong, Oshima, Yoshifumi, Suzuki, Toshi-kazu, AIP Advances, 7(5), pp.055303-1-055303-8, 2017-05-04, American Institute of Physics
5 Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors / Le, Son Phuong, Ui, Toshimasa, Nguyen, Tuan Quy, Shih, Hong-An, Suzuki, Toshi-kazu, Journal of Applied Physics, 119(20), pp.204503-1-204503-6, 2016-05-27, American Institute of Physics
6 Low-frequency noise in InAs films bonded on low-k flexible substrates / Le, Son Phuong, Ui, Toshimasa, Suzuki, Toshi-kazu, Applied Physics Letters, 107(19), pp.192103-1-192103-4, 2015-11-09, American Institute of Physics
7 Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices / Shih, Hong-An, Kudo, Masahiro, Suzuki, Toshi-kazu, Journal of Applied Physics, 116(18), pp.184507-1-184507-9, 2014-11-14, American Institute of Physics
8 Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices / Le, Son Phuong, Nguyen, Tuan Quy, Shih, Hong-An, Kudo, Masahiro, Suzuki, Toshi-kazu, Journal of Applied Physics, 116(5), pp.54510-1-54510-8, 2014-08-07, American Institute of Physics
9 Carrier recombination lifetime in InAs thin films bonded on low-k flexible substrates / Suzuki, Toshi-kazu, Hayato Takita, Cong Thanh Nguyen, Iiyama, Koichi, AIP Advances, 2(4), pp.042105-1-042105-6, 2012-10-02, American Institute of Physics
10 Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping / Shih, Hong-An, Kudo, Masahiro, Suzuki, Toshi-kazu, Applied Physics Letters, 101(4), pp.043501-1-043501-4, 2012-07-24, American Institute of Physics
11 Electron distribution and scattering in InAs films on low-k flexible substrates / Nguyen, Cong Thanh, Shih, Hong-An, Akabori, Masashi, Suzuki, Toshi-kazu, Applied Physics Letters, 100(23), pp.232103-1-232103-4, 2012-06-05, American Institute of Physics
12 Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates / Takita, Hayato, Hashimoto, Norihiko, Nguyen, Cong Thanh, Kudo, Masahiro, Akabori, Masashi, Suzuki, Toshi-kazu, Applied Physics Letters, 97(1), pp.12102-1-12102-3, 2010-07-07, American Institute of Physics
13 Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases / Akabori, Masashi, Trinh, Thanh Quang, Kudo, Masahiro, Hardtdegen, Hilde, Schäpers, Thomas, Suzuki, Toshi-kazu, Physica E: Low-dimensional Systems and Nanostructures, 42(4), pp.1130-1133, 2010, Elsevier
14 Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<0.89>Ga_<0.11>Sb/In_<0.88>Al_<0.12>Sb by magnetoresistance measurements / Akabori, M., Guzenko, V. A., Sato, T., Schapers, Th., Suzuki, T., Yamada, S., Physical Review B, 77(20), pp.205320-, 2008-05-15, American Physical Society
15 Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates / Jeong, Yonkil, Shindo, Masanori, Akabori, Masashi, Suzuki, Toshi-kazu, Applied Physics Express, 1, pp.021201-1-021201-3, 2008-01-25, The Japan Society of Applied Physics
16 Spin splitting in InGaSb/InAlSb 2DEG having high indium content / Akabori, M, Sunouchi, T, Kakegawa, T, Sato, T, Suzuki, T, Yamada, S, Physica E: Low-dimensional Systems and Nanostructures, 34(1-2), pp.413-416, 2006-08, Elsevier
17 Impurity Diffusion in InGaAs Esaki Tunnel Diodes of Varied Defect Densities / ONO, Hideki, TANIGUCHI, Satoshi, SUZUKI, Toshi-kazu, IEICE TRANSACTIONS on Electronics, E89-C(7), pp.1020-1024, 2006-07-01, 電子情報通信学会
18 High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures / Suzuki, T., Ono, H., Taniguchi, S., Science and Technology of Advanced Materials, 6(5), pp.400-405, 2005-07, Elsevier
19 Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion / Ono, Hideki, Yanagita, Masashi, Taniguchi, Satoshi, Suzuki, Toshi-kazu, Proceedings of 17th International Conference on Indium Phosphide and Related Materials, pp.445-448, 2005, Institute of Electrical and Electronics Engineers (IEEE)
20 High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures / Ono, Hideki, Taniguchi, Satoshi, Suzuki, Toshi-kazu, Proceedings of 16th International Conference on Indium Phosphide and Related Materials, pp.288-291, 2004, Institute of Electrical and Electronics Engineers (IEEE)
21 Experimental evidence of surface conduction in AlSb-InAs tunneling diodes / Nomoto, K., Taira, K., Suzuki, T., Hase, I., Journal of Applied Physics, 85(2), pp.953-958, 1999-01-15, American Institute of Physics
22 Diameter dependence of current-voltage characteristics of ultrasmall area AlSb-InAs resonant tunneling diodes with diameters down to 20nm / Nomoto, K., Taira, K., Suzuki, T., Hase, I., Hiroshima, H., Komuro, M., Applied Physics Letters, 70(15), pp.2025-2027, 1997-04-14, American Institute of Physics
23 A statistical model of quantum dot arrays with Coulomb coupling / Suzuki, Toshi-kazu, Nomoto, Kazumasa, Ugajin, Ryuichi, Hase, Ichiro, Journal of Applied Physics, 78(4), pp.2547-2549, 1995-08-15, American Institute of Physics

 
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