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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4881
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| タイトル: | High-temperature electron transport in metamorphic InGaAs/InAlAs heterostructures |
| 著者: | Suzuki, T.
Ono, H.
Taniguchi, S. |
| キーワード: | metamorphic InGaAs/InAlAs
electron mobility
electron saturation velocity
delay-time analysis
high-frequency performance |
| 発行日: | 2005-07 |
| 出版者: | Elsevier |
| 誌名: | Science and Technology of Advanced Materials |
| 巻: | 6 |
| 号: | 5 |
| 開始ページ: | 400 |
| 終了ページ: | 405 |
| DOI: | 10.1016/j.stam.2005.02.024 |
| 抄録: | We have investigated high-temperature electron transport in metamorphic InGaAs/InAlAs modulation-doped heterostructures with several indium contents. The electron mobility characterizing the low-field transport properties was obtained from the Hall measurements. From room temperature to 400 K, ～ 26 % decrease in the mobility was observed, which is well-explained by the polar-optical-phonon scattering theory. The indium content dependence of the mobility is explained by the theory with the Γ-valley electron mass. On the other hand, the electron saturation velocity characterizing the high-field transport properties was studied by means of the delay-time analysis of the transistors with gate length of 0.12-1.0 μm. We observed ～ 12 % decrease in the saturation velocity from room temperature to 400 K, which is smaller than that in the mobility and roughly consistent with the energy relaxation theory. In the indium content dependence of the saturation velocity, the effect of decrease in the electron density in the L- and X-valley is important. The high-frequency performance of the transistors at high temperatures shows a deterioration according to the decrease in the saturation velocity. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. T. Suzuki, H. Ono and S. Taniguchi, Science and Technology of Advanced Materials, 6(5), 2005, 400-405, http://dx.doi.org/10.1016/j.stam.2005.02.024 |
| URI: | http://hdl.handle.net/10119/4881 |
| 資料タイプ: | author |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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