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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/19949
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| タイトル: | Electron mobility anisotropy in InAs/GaAs(001) heterostructures |
| 著者: | Le, Son Phuong
Suzuki, Toshi-kazu |
| 発行日: | 2021-05-03 |
| 出版者: | AIP Publishing |
| 誌名: | Applied Physics Letters |
| 巻: | 118 |
| 号: | 18 |
| 開始ページ: | 182101 |
| DOI: | 10.1063/5.0039748 |
| 抄録: | Electron transport properties in InAs films epitaxially grown on GaAs(001), InAs/GaAs(001) heterostructures, were systematically investigated through the dependence on crystal direction, thickness, and temperature. As a result, we found a pronounced electron mobility anisotropy, in which the mobility is highest and lowest along [110] and [110] crystal directions, respectively. The mobility anisotropy intensifies as the InAs thickness decreases, while it diminishes in thick regimes, where the InAs films are relatively immune to effects from the epitaxial heterointerface. We observed the anisotropy in a wide temperature range, 5–395 K, with an enhancement at high temperatures. Our analysis indicates that the electron mobility anisotropy can be attributed to anisotropic electron scatterings by both interface roughness and random piezoelectric polarization near the interface. |
| Rights: | Copyright (c) 2021 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Son Phuong Le, Toshi-kazu Suzuki; Electron mobility anisotropy in InAs/GaAs(001) heterostructures, Applied Physics Letters, 3 May 2021; 118 (18): 182101 and may be found at https://doi.org/10.1063/5.0039748. |
| URI: | http://hdl.handle.net/10119/19949 |
| 資料タイプ: | publisher |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| T-SUZUKI-N-0627-2r .pdf | | 1860Kb | Adobe PDF | 見る/開く |
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