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http://hdl.handle.net/10119/9495
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| タイトル: | Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates |
| 著者: | Takita, Hayato
Hashimoto, Norihiko
Nguyen, Cong Thanh
Kudo, Masahiro
Akabori, Masashi
Suzuki, Toshi-kazu |
| キーワード: | InAs
epitaxial lift-off
electron mobility |
| 発行日: | 2010-07-07 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 97 |
| 号: | 1 |
| 開始ページ: | 12102-1 |
| 終了ページ: | 12102-3 |
| DOI: | 10.1063/1.3459137 |
| 抄録: | We investigated InAs ultrathin films on flexible substrates. InAs layers grown on GaAs(001) are separated by epitaxial lift-off (ELO), followed by van der Waals bonding (VWB) on flexible substrates. We employed “normal” and “inverted” VWB; in the former, top and bottom sides are maintained during ELO and VWB, while inverted in the latter. From the InAs on flexible substrates, we fabricated Hall-bar devices with recess etch-thinning, using which electron transport properties depending on InAs layer thickness were characterized. For the inverted VWB, we observe very high electron mobilities of InAs ultrathin films, such as ∼ 10 000 cm2/V s for ∼ 100 nm thickness and ∼ 7000 cm2/V s for ∼ 20 nm. These carrier mobilities are highest not only for thin films on flexible substrates but also for InAs thin films; higher than those of InAs films grown on GaAs(111)A and membranes fabricated from them. |
| Rights: | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hayato Takita, Norihiko Hashimoto, Cong Thanh Nguyen, Masahiro Kudo, Masashi Akabori, and Toshi-kazu Suzuki, Applied Physics Letters, 97(1), 12102- (2010) and may be found at http://link.aip.org/link/APPLAB/v97/i1/p012102/s1 |
| URI: | http://hdl.handle.net/10119/9495 |
| 資料タイプ: | publisher |
| 出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
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