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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/15733
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| タイトル: | An InAs/high-k/low-k structure: Electron transport and interface analysis |
| 著者: | Ui, Toshimasa
Mori, Ryousuke
Le, Son Phuong
Oshima, Yoshifumi
Suzuki, Toshi-kazu |
| キーワード: | InAs
high-k/low-k
electron transport
interface analysis |
| 発行日: | 2017-05-04 |
| 出版者: | American Institute of Physics |
| 誌名: | AIP Advances |
| 巻: | 7 |
| 号: | 5 |
| 開始ページ: | 055303-1 |
| 終了ページ: | 055303-8 |
| DOI: | 10.1063/1.4983176 |
| 抄録: | We fabricated and investigated an InAs/high-k/low-k structure in comparison with an InAs/low-k structure, where the former and the latter are respectively obtained by bonding of InAs/Al_2O_3/AlN and InAs on low-k flexible substrates (FS). The InAs/high-k/low-k (InAs/A_l2O_3/AlN/FS) exhibits electron mobilities immune to interface fluctuation scattering, whereas this scattering is serious for the InAs/low-k (InAs/FS). Moreover, we find that electron sheet concentrations in the InAs/high-k/low-k are significantly higher than those in the InAs/low-k. From InAs/Al_2O_3 interface analysis by energy-dispersive X-ray spectroscopy and electron energy-loss spectroscopy, we find that the higher electron concentrations can be attributed to natural modulation doping from A_l2O_3 to InAs. |
| Rights: | Toshimasa Ui, Ryousuke Mori, Son Phuong Le, Yoshifumi Oshima, and Toshi-kazu Suzuki, AIP Advances, 7(5), 2017, 055303-1-055303-8. © 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). [http://dx.doi.org/10.1063/1.4983176] |
| URI: | http://hdl.handle.net/10119/15733 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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