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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16114
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タイトル: | Multi-level Non-Volatile Organic Transistor-based Memory using Lithium ion encapsulated Fullerene as a Charge Trapping Layer |
著者: | Manh Tran, Cuong Sakai, Heisuke Kawashima, Yuki Ohkubo, Kei Fukuzumi, Shunichi Murata, Hideyuki |
キーワード: | multi-level non-volatile memory organic transistor-based memory |
発行日: | 2017-03-16 |
出版者: | Elsevier |
誌名: | Organic Electronics |
巻: | 45 |
開始ページ: | 234 |
終了ページ: | 239 |
DOI: | 10.1016/j.orgel.2017.03.018 |
抄録: | We report on multi-level non-volatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li^+@C_<60>) as a charge trapping layer. Memory organic field-effect transistors (OFETs) with a Si^<++>/SiO_2/Li^+@C_<60>/Cytop/Pentacene/Cu structure exhibited a performance of p-type transistor with a threshold voltage (V_<th>) of -5.98 V and a mobility (μ) of 0.84 cm^2 V^<-1> s^<-1>. The multi-level memory OFETs exhibited memory windows (ΔV_<th>) of approximate 10 V, 16 V, and 32 V, with a programming gate voltage of 150 V for 0.5 s, 5 s, and 50 s, and an erasing gate voltage of -150 V for 0.17 s, 1.7 s, and 17 s, respectively. Four logic states were clearly distinguishable in our multi-level memory, and its data could be programmed or erased many times. The multi-level memory effect in our OFETs is ascribed to the electron trapping ability of the Li^+@C_<60> layer. |
Rights: | Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Cuong Manh Tran, Heisuke Sakai, Yuki Kawashima, Kei Ohkubo, Shunichi Fukuzumi, and Hideyuki Murata, Organic Electronics, 45, 2017, 234-239, http://dx.doi.org/10.1016/j.orgel.2017.03.018 |
URI: | http://hdl.handle.net/10119/16114 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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23129.pdf | | 1099Kb | Adobe PDF | 見る/開く |
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