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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4408
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| タイトル: | An investigation of correlation between transport characteristics and trap states in n-channel organic field-effect transistors |
| 著者: | Kawasaki, Naoko
Ohta, Yohei
Kubozono, Yoshihiro
Konishi, Atsushi
Fujiwara, Akihiko |
| 発行日: | 2008-04-23 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 92 |
| 号: | 16 |
| 開始ページ: | 163307-1 |
| 終了ページ: | 163307-3 |
| DOI: | 10.1063/1.2908886 |
| 抄録: | Transport characteristics in n-channel organic field-effect transistors are discussed on the basis of density of states (DOS) for trap states determined with multiple trap and release model. First the trap-free intrinsic mobilities, the activation energies, and total effective DOS for conduction band are determined with the effective field-effect mobility versus temperature plots and total DOS of trap states. Second the general formula for subthreshold swing S applicable to organic field-effect transistors is derived and the surface potentials are determined from the S determined from the transfer curves and the DOS for the trap states according to the general formula. |
| Rights: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Naoko Kawasaki, Yohei Ohta, Yoshihiro Kubozono, Atsushi Konishi, Akihiko Fujiwara, Applied Physics Letters, 92(16), 163307 (2008) and may be found at http://link.aip.org/link/?APPLAB/92/163307/1 |
| URI: | http://hdl.handle.net/10119/4408 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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| 131-28.pdf | | 163Kb | Adobe PDF | 見る/開く |
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