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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4535
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| タイトル: | Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures |
| 著者: | Sato, Hidekazu
Izumi, Akira
Matsumura, Hideki |
| 発行日: | 2000-10-23 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 77 |
| 号: | 17 |
| 開始ページ: | 2752 |
| 終了ページ: | 2754 |
| DOI: | 10.1063/1.1319513 |
| 抄録: | The feasibility of using ultrathin silicon nitride (SiN_x) films, prepared by catalytic chemical vapor deposition (Cat-CVD) method, as an ultrathin gate dielectric is reported. The effects of postdeposition treatments carried out using hydrogen (H_2)-decomposed species or NH3-decomposed species formed by catalytic cracking of H_2 and NH_3 are also studied. A small hysteresis loop is seen in the C-V curve of as-deposited Cat-CVD SiN_x films. The leakage current in the case of these films with equivalent oxide thickness (EOT) of 3 nm is slightly larger than that in the conventional thermal SiO_2 films of similar EOT. However, it is found that the properties of Cat-CVD SiN_x films are markedly improved by the postdeposition H_2 or NH_3 treatments, that is, the hysteresis loop disappears and the leakage current decreases by three orders of magnitude. |
| Rights: | Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Hidekazu Sato, Akira Izumi and Hideki Matsumura, Applied Physics Letters, 77(17), 2752-2754 (2000) and may be found at http://link.aip.org/link/?APPLAB/77/2752/1 |
| URI: | http://hdl.handle.net/10119/4535 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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