|
|
JAIST Repository >
著者: "DENG, YUCHEN"
7 著者名表示.
| 発行日 | タイトル |
著者 |
|---|
| 6-Jul-2021 | Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering | Nguyen, Duong Dai; Isoda, Takehiro; Deng, Yuchen; Suzuki, Toshi-kazu |
| 5-Jul-2023 | Electron mobility enhancement in n-GaN under Ohmic-metal | Uryu, Kazuya; Deng, Yuchen; Le, Son Phuong; Suzuki, Toshi-kazu |
| 11-Aug-2023 | Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures | Nguyen, Duong Dai; Deng, Yuchen; Suzuki, Toshi-kazu |
| 28-Feb-2024 | AlGaN/GaN devices with metal-semiconductor or insulator-semiconductor interfacial layers: Vacuum level step due to dipole and interface fixed charge | Deng, Yuchen; Gelan, Jieensi; Uryu, Kazuya; Suzuki, Toshi-kazu |
| Jun-2024 | 金属-半導体界面層あるいは絶縁体-半導体界面層を用いたAlGaN/GaNデバイスの閾値電圧制御 | DENG, YUCHEN; でん, ゆうじん |
| 8-Jun-2025 | Weak frequency dispersion of C-V characteristics of AlGaN/GaN metal-insulator-semiconductor devices despite high interface trap density | Deng, Yuchen; Gelan, Jieensi; Uryu, Kazuya; Suzuki, Toshi-kazu |
| 9-Jun-2025 | Low-temperature-annealed Ohmic contacts to ultrathin-AlGaN/GaN heterostructures with no two-dimensional electron gas | Uryu, Kazuya; Deng, Yuchen; Nanjo, Takuma; Suzuki, Toshi-kazu |
|
