|
|
JAIST Repository >
著者: "Akabori, Masashi"
14 著者名表示.
| 発行日 | タイトル |
著者 |
|---|
| 25-Jan-2008 | Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates | Jeong, Yonkil; Shindo, Masanori; Akabori, Masashi; Suzuki, Toshi-kazu |
| 2010 | Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases | Akabori, Masashi; Trinh, Thanh Quang; Kudo, Masahiro; Hardtdegen, Hilde; Schäpers, Thomas; Suzuki, Toshi-kazu |
| 7-Jul-2010 | Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates | Takita, Hayato; Hashimoto, Norihiko; Nguyen, Cong Thanh; Kudo, Masahiro; Akabori, Masashi; Suzuki, Toshi-kazu |
| 10-Feb-2012 | Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors | Akabori, Masashi; Murakami, Tatsuya; Yamada, Syoji |
| 29-May-2012 | (110)上の選択成長を利用した平面型並列ナノワイヤ電界効果トランジスタ | 赤堀, 誠志; Akabori, Masashi |
| 5-Jun-2012 | Electron distribution and scattering in InAs films on low-k flexible substrates | Nguyen, Cong Thanh; Shih, Hong-An; Akabori, Masashi; Suzuki, Toshi-kazu |
| 12-Oct-2012 | High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices | Hidaka, Shiro; Akabori, Masashi; Yamada, Syoji |
| 9-Oct-2014 | High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N_2 gas field ion source | Akabori, Masashi; Hidaka, Shiro; Yamada, Syoji; Kozakai, Tomokazu; Matsuda, Osamu; Yasaka, Anto |
| 3-Jun-2015 | 領域選択形成したＩｎＡｓナノワイヤ／強磁性体複合構造によるスピンデバイス | 赤堀, 誠志; Akabori, Masashi |
| 30-Sep-2016 | Characterization of spin-orbit coupling in gated wire structures using Al_2O_3/In_0.75Ga_0.25As/In_0.75Al_0.25As inverted heterojunctions | Ohori, Takahiro; Akabori, Masashi; Hidaka, Shiro; Yamada, Syoji |
| 8-Feb-2017 | Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B | Islam, Md. Earul; Akabori, Masashi |
| 24-Feb-2017 | Interaction study of nitrogen ion beam with silicon | Schmidt, Marek E.; Zhang, Xiaobin; Oshima, Yoshifumi; Anh, Le The; Yasaka, Anto; Kanzaki, Teruhisa; Muruganathan, Manoharan; Akabori, Masashi; Shimoda, Tatsuya; Mizuta, Hiroshi |
| 6-Mar-2017 | In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure | Islam, Md. Earul; Akabori, Masashi |
| 20-Feb-2018 | Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy | Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi |
|
